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TRIAC. NTE56071 Datasheet

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TRIAC. NTE56071 Datasheet
















NTE56071 TRIAC. Datasheet pdf. Equivalent













Part

NTE56071

Description

TRIAC



Feature


NTE56070 & NTE56071 TRIAC, 25A, High Com mutation Description: The NTE56070 and NTE56071 are glass passivated, high com mutation TRIACs in a TO220 type package designed for use in circuits where hig h static and dynamic dV/dt and high dI/ dt can occur. These devices will commut ate the full rated RMS current at the m aximum rated junction temperature, with out the aid of a s.
Manufacture

NTE Electronics

Datasheet
Download NTE56071 Datasheet


NTE Electronics NTE56071

NTE56071; nubber. Absolute Maximum Ratings: Repeti tive Peak Off–Sate Voltage (Note 1), VDRM NTE56070 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5607 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V .


NTE Electronics NTE56071

RMS On–State Current (Full Sine Wave, TMB ≤ 91°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 A Non–Repetitive Peak On–State Curr ent, ITSM (Full Sine Wave, TJ = +25°C prior to Surge) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190 A t = 16.7ms . . . . . . . ..


NTE Electronics NTE56071

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209A I2 t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A2sec Repetitive R ate–of–Rise of On–State Current a fter Triggering, dIT/dt (ITM = 30A, IG = 0.2A, dIG/dt = 0.2A/µs.





Part

NTE56071

Description

TRIAC



Feature


NTE56070 & NTE56071 TRIAC, 25A, High Com mutation Description: The NTE56070 and NTE56071 are glass passivated, high com mutation TRIACs in a TO220 type package designed for use in circuits where hig h static and dynamic dV/dt and high dI/ dt can occur. These devices will commut ate the full rated RMS current at the m aximum rated junction temperature, with out the aid of a s.
Manufacture

NTE Electronics

Datasheet
Download NTE56071 Datasheet




 NTE56071
NTE56070 & NTE56071
TRIAC, 25A, High Commutation
Description:
The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated RMS current at the maximum rated junction temperature,
without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56070 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56071 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, TMB 91°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 30A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.




 NTE56071
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 30A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
2 18 50 mA
2 21 50 mA
2 34 50 mA
31 60 mA
34 90 mA
30 60 mA
31 60 mA
1.3 1.55 V
0.7 1.5 V
0.25 0.4
V
0.1 0.5 mA
Critical RateofRise of
OffState Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
1000 4000 V/µs
Critical RateofChange of
Commutating Current
dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 25A, 44 A/ms
without Snubber, Gate Open
Gate Controlled TurnOn Time
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A, 2 µs
dIG/dt = 5A/µs
Note 2. Device does not trigger in the MT2 (), G (+) quadrant.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT2
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2








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