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TRIAC. NTE5645 Datasheet

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TRIAC. NTE5645 Datasheet
















NTE5645 TRIAC. Datasheet pdf. Equivalent













Part

NTE5645

Description

TRIAC



Feature


NTE5645 TRIAC – 10A Isolated Tab Descr iption: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to co nduction for either polarity of applied voltage with positive or .
Manufacture

NTE Electronics

Datasheet
Download NTE5645 Datasheet


NTE Electronics NTE5645

NTE5645; negative gate trigger current. The NTE56 45 is designed for control applications in lighting, heating, cooling and stat ic switching relays. Absolute Maximum R atings: Repetitive Peak Off–State Vol tage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75 C, Conduction Angle of 180°C), IT(RMS ) . . . . . . . . . . . ..


NTE Electronics NTE5645

. . . . . 10A Peak Surge (Non–Repetit ive) On–State Current (One Cycle, 50H z or 60Hz), ITSM . . . . . . . . . 100A Peak Gate–Trigger Current (3µs Max) , IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate–Power D issipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Averag.


NTE Electronics NTE5645

e Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, T J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage Temp erature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .





Part

NTE5645

Description

TRIAC



Feature


NTE5645 TRIAC – 10A Isolated Tab Descr iption: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to co nduction for either polarity of applied voltage with positive or .
Manufacture

NTE Electronics

Datasheet
Download NTE5645 Datasheet




 NTE5645
NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM VDRM = 600V, Gate Open, TJ = +100°C – – 2 mA
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
VTM
IH
Critical
dv/dt
IT = 14A
Gate Open
VD = 600V, Gate Open, TC = +100°C
– – 2.2 V
– – 50 mA
– 5 – V/µs
DC Gate Trigger Current
T2 (+) Gate (+), T2 (–) Gate (–)
T2 (+) Gate (–), T2 (–) Gate (+)
IGT VD = 12V, RL = 30
– – 50 mA
– – 80 mA




 NTE5645
Electrical Characteristics (Contd): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Gate Trigger Voltage
VGT VD = 12V, RL = 30
– – 2.5 V
GateControlled TurnOn Time
tgt
VD = 600V, IGT = 80mA, tr = 0.1µs,
2.5 µs
iT = 10A (Peak)
.147 (3.75)
Dia Max
.420 (10.67)
Max
Isolated
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2








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