DatasheetsPDF.com

20 Amp. NTE5933 Datasheet

DatasheetsPDF.com

20 Amp. NTE5933 Datasheet
















NTE5933 Amp. Datasheet pdf. Equivalent













Part

NTE5933

Description

Silicon Power Rectifier Diode / 20 Amp



Feature


NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp D escription and Features: The NTE5844, N TE5845, and NTE5912 through NTE5933 are low power general purpose rectifier di odes in a DO4 type package designed for battery chargers, converters, power su pplies, and machine tool controls. Feat ures: D D D D High Surge Current Capabi lity High Voltage .
Manufacture

NTE Electronics

Datasheet
Download NTE5933 Datasheet


NTE Electronics NTE5933

NTE5933; Available Designed for a Wide Range of A pplications Available in Anode–to–C ase or Cathode–to–Case Style Ratin gs and Characteristics: Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Maxim um Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5933

. . . . . . 400A Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps Maxim um Reverse Recovery Voltage Range, VRRM . . . . . . . . ..


NTE Electronics NTE5933

. . . . . . . . . . . . . . . . . . . . . 50 to 1200V Voltage Ratings: (TJ = + 175°C) NTE Type Number Cathode to Case Anode to Case VRRM–Max Repetitive Pe ak Reverse Volt. (V) VRSM–Max Non–R epetitive Peak Reverse Voltage (V) VR Max. Direct Reverse Voltage (V) VR(SR) Minimum Avalanche Voltage (V) IRM–Ma x Reverse Current Rated VRRM (mA) 5912 5914 5916 5918 5920 5922 592.





Part

NTE5933

Description

Silicon Power Rectifier Diode / 20 Amp



Feature


NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp D escription and Features: The NTE5844, N TE5845, and NTE5912 through NTE5933 are low power general purpose rectifier di odes in a DO4 type package designed for battery chargers, converters, power su pplies, and machine tool controls. Feat ures: D D D D High Surge Current Capabi lity High Voltage .
Manufacture

NTE Electronics

Datasheet
Download NTE5933 Datasheet




 NTE5933
NTE5844 & NTE5845,
NTE5912 thru NTE5933
Silicon Power Rectifier Diode, 20 Amp
Description and Features:
The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma-
chine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Maximum Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C)
NTE Type Number
Cathode
to Case
5912
Anode
to Case
5913
5914 5915
5916 5917
5918 5919
5920 5921
5922 5923
5924 5925
5928 5929
5932 5933
5844 5845
VRRM–Max
Repetitive Peak
Reverse Volt.
(V)
50
100
200
300
400
500
600
800
1000
1200
VRSM–Max
Non–Repetitive Peak
Reverse Voltage
(V)
75
150
275
385
500
613
725
950
1200
1400
VR–Max.
Direct Reverse
Voltage
(V)
50
100
200
300
400
50
600
800
1000
1200
VR(SR)
Minimum Avalanche
Voltage
(V)
500
613
725
950
1200
1350
IRM–Max
Reverse Current
Rated VRRM
(mA)
12
12
12
12
12
12
12
12
12
12




 NTE5933
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Average Forward Current
Maximum Peak OneCycle
NonRepetitive Surge Current
IF (AV)
IFSM
180° sinusoidal condition, TC = +150°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms No voltage reapplied
20 A
400 A
425 A
Maximum I2t for Fusing
Maximum I2t for Individual Device
Fusing
t = 10ms 100% rated voltage reapplied,
t = 8.3ms TJ = +175°C
I2t t = 10ms No voltage reapplied,
t = 8.3ms Initial TJ = +175°C
t = 10ms 100% rated voltage reapplied
t = 8.3ms
437 A
462 A
540 A2s
493 A2s
765 A2s
700 A2s
Maximum I2pt
I2pt t = 0.1 to 10ms, No voltage reapplied, Note 1
7640 A2pt
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
VFM IFM = 63A, TJ = +25°C
VM (TO) TJ = +175°C
1.23 V
0.78 V
Maximum Value of Forward Slope
Resistance
rt
Note 1. I2t for time tx = I2Ǩt S Ǩtx
TJ = +175°C
7.55 m
ThermalMechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
JunctiontoCase
TJ
Tstg
RthJC
DC operation
65 to + 175
65 to + 200
1.6
°C
°C
K/W
Thermal Resistance, CasetoSink
RthCS Mounting surface flat, smooth and
greased
0.25
K/W
Mounting Torque
T Nonlubricated threads
1.2 1.5 mN
(10.5 13.5) (inlb)
Approximate Weight
wt
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
1032 NF2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max








Recommended third-party NTE5933 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)