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Power Rectifier. NTE6090 Datasheet

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Power Rectifier. NTE6090 Datasheet
















NTE6090 Rectifier. Datasheet pdf. Equivalent













Part

NTE6090

Description

Silicon Dual Power Rectifier



Feature


NTE6090 Silicon Dual Power Rectifier Des cription: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type p ackage designed using the Schottky Barr ier principle with a platinum barrier m etal. Features: D Dual Diode Constructi on: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guar ding for Stress Protection D Low Forwar d Voltage D +150°C.
Manufacture

NTE Electronics

Datasheet
Download NTE6090 Datasheet


NTE Electronics NTE6090

NTE6090; Operating Junction Temperature D Guaran teed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Volta ge, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Pe ak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blockin.


NTE Electronics NTE6090

g Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Average Rectified F orward Current (VR = 45V, TC = +105°C) , IF(AV) Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Per Diode . . . . ..


NTE Electronics NTE6090

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Repetitive Forward Curr ent, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A Non– Repetitive Peak Surge Current, IFSM (Su rge Applied at Rated Load Conditions, H alfwave, Single Phase, 60Hz) . . . . . . . . . . 200A Peak .





Part

NTE6090

Description

Silicon Dual Power Rectifier



Feature


NTE6090 Silicon Dual Power Rectifier Des cription: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type p ackage designed using the Schottky Barr ier principle with a platinum barrier m etal. Features: D Dual Diode Constructi on: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guar ding for Stress Protection D Low Forwar d Voltage D +150°C.
Manufacture

NTE Electronics

Datasheet
Download NTE6090 Datasheet




 NTE6090
NTE6090
Silicon Dual Power Rectifier
Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the
Schottky Barrier principle with a platinum barrier metal.
Features:
D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
D Guarding for Stress Protection
D Low Forward Voltage
D +150°C Operating Junction Temperature
D Guaranteed Reverse Avalanche
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV)
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A
Non–Repetitive Peak Surge Current, IFSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A
Peak Repetitive Reverse Current, Per Diode (2µs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . . . . +175°C
Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Electrical Characteristics (Per Diode): (Note 1)
Parameter
Symbol
Test Conditions
Instantaneous Forward Voltage
Instantaneous Reverse Current
vF iF = 20A, TC = +125°C
iF = 30A, TC = +125°C
iF = 30A, TC = +25°C
iR VR = 45V, TC = +125°C
VR = 45V, TC = +25°C
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
– – 0.60 V
– – 0.72 V
– – 0.76 V
– – 100 mA
– – 1 mA




 NTE6090
.190 (4.82)
.787
(20.0)
TO3P Type Package
.615 (15.62)
K
.591
(15.02)
.126 (3.22)
Dia
.787
(20.0)
A KA
.215 (5.47)
TO218 Type Package
.626 (15.92)
Max
.166 (4.23)
Dia Max
.200 (5.08)
Max
.815
(20.72)
K .147 (3.76)
A1 K A2
.490
(12.44)
.500
(12.7)
Min
.215 (5.47)
.110 (2.79)
.050
(1.27)








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