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Stud Mount. NTE75 Datasheet

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Stud Mount. NTE75 Datasheet
















NTE75 Mount. Datasheet pdf. Equivalent













Part

NTE75

Description

Silicon NPN Transistor High Power Amplifier / Switch (Stud Mount)



Feature


NTE75 Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount) Descript ion: The NTE75 is a silicon NPN transis tor in a TO111 type stud mount package that provides a unique combination of l ow saturation voltage, high gain, and f ast switching. This device is ideally s uited for power supply, pulse amplifier , and similar high efficiency power swi tching application.
Manufacture

NTE Electronics

Datasheet
Download NTE75 Datasheet


NTE Electronics NTE75

NTE75; s. Features: D Fast Switching: tr, tf = 300ns (Max) D Low Saturation Voltage: 2 50mV max @ 1A Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Collector†“Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE75

. . . . . . . . . . . . . . . 80V Emitt er–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation , PD TA = +25°C . . .


NTE Electronics NTE75

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..





Part

NTE75

Description

Silicon NPN Transistor High Power Amplifier / Switch (Stud Mount)



Feature


NTE75 Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount) Descript ion: The NTE75 is a silicon NPN transis tor in a TO111 type stud mount package that provides a unique combination of l ow saturation voltage, high gain, and f ast switching. This device is ideally s uited for power supply, pulse amplifier , and similar high efficiency power swi tching application.
Manufacture

NTE Electronics

Datasheet
Download NTE75 Datasheet




 NTE75
NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: tr, tf = 300ns (Max)
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Cutoff Current
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
V(BR)CBO IC = 10µA
V(BR)CEO IC = 100mA, Note 1
V(BR)EBO IE = 10µA
ICEO VCE = 60V
ICEX VCE = 110V, VEB = 500mV
ICBO VCB = 80V
IEBO VEB = 6V
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
110 – – V
80 – – V
8––V
– – 100 µA
– – 10 µA
– – 0.4 µA
– – 0.4 µA




 NTE75
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain (Note 1)
Collector Saturation Voltage
Base Saturation Voltage
Base ON Voltage
AC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
hFE
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
Cob
td
tr
ts
tf
VCE = 5V, IC = 50mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 1A, TA = –65°C
VCE = 5V, IC = 5A
IC = 1A, IB = 100mA, Note 1
IC = 5A, IB = 500mA, Note 1
IC = 1A, IB = 100mA, Note 1
VCE = 2V, IC = 1A, Note 1
VCE = 5V, IC = 50mA, f = 1kHz
VCE = 10V, IC = 1A, f = 10MHz
VCE = 10V, IE = 0, f = 1MHz
VCC = 20V, IC = 1A,
IB1 = –IB2 = 100mA,
Pulse Width = 2µs,
Duty Cycle ≤ 2%,
Source Impedance = 50Ω
40 –
–
40 – 120
15 –
–
15 –
–
– – 0.25 V
– – 1.5 V
– – 1.2 V
– – 1.2 V
40 – 120
20 – 120 MHz
– – 150 pF
– – 60 ns
– – 300 ns
– – 1.7 µs
– – 300 ns
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Base
.190
(4.82)
Dia
.432
(10.95)
Emitter
.347 (8.82)
Dia
Collector/
Stud
.760
(19.3)
Max
.115 (2.92)
10–32 NF–2A
.370
(9.39)
.078
(1.97)
Max
.420
(10.66)








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