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NTE98 Switch. Datasheet pdf. Equivalent













Part

NTE98

Description

Silicon NPN Transistor HV Darlington Power Amp / Switch



Feature


NTE98 Silicon NPN Transistor HV Darlingt on Power Amp, Switch Description: The N TE98 is a silicon NPN Darlington transi stor in a TO3 type package designed for high voltage, high–speed, power swit ching in inductive circuits where fallâ €“time is critical. They are particular ly suited for line operated switch–mo de applications. Applications: D Switch ing Regulators D Inverte.
Manufacture

NTE Electronics

Datasheet
Download NTE98 Datasheet


NTE Electronics NTE98

NTE98; rs D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector–Emitter V oltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 00V Collector–Emitter Voltage, VCEX(s us) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collectorâ €“Emitter Voltage, VCEV .


NTE Electronics NTE98

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter –Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Curr ent, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE98

. . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak.





Part

NTE98

Description

Silicon NPN Transistor HV Darlington Power Amp / Switch



Feature


NTE98 Silicon NPN Transistor HV Darlingt on Power Amp, Switch Description: The N TE98 is a silicon NPN Darlington transi stor in a TO3 type package designed for high voltage, high–speed, power swit ching in inductive circuits where fallâ €“time is critical. They are particular ly suited for line operated switch–mo de applications. Applications: D Switch ing Regulators D Inverte.
Manufacture

NTE Electronics

Datasheet
Download NTE98 Datasheet




 NTE98
NTE98
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.




 NTE98
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
VCEO(sus)
VCEX(sus)
ICEV
ICER
IEBO
IC = 100mA, IB = 0, Vclamp = 500V
IC = 2A, Vclamp = 500V, TC = +100°C
IC = 5A, Vclamp = 500V, TC = +100°C
VCEV = 700V, VBE(off) = 1.5V
VCEV = 700V, VBE(off) = 1.5V, TC = +150°C
VCE= 700V, RBE= 50Ω, TC = +100°C
VEB = 2V, IC = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VF
VCE = 5V, IC = 5A
VCE = 5V, IC = 10A
IC = 10A, IB = 500mA
IC = 10A, IB = 500mA, TC = +100°C
IC = 20A, IB = 2A
IC = 10A, IB = 500mA
IC = 10A, IB = 500mA, TC = +100°C
IF = 5A, Note 3
Small–Signal Current Gain
hfe
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
VCE = 10V, IC = 1A, ftest = 1MHz
VCB = 50V, IE = 0, ftest = 100kHz
Delay Time
Rise Time
td VCC = 250V, IC = 10A, IB1 = 500mA,
tr VBE(off) = 5V, tp = 50µs, Duty Cycle ≤ 2%
Storage Time
ts
Fall Time
tf
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Crossover Time
Storage Time
Crossover Time
tsv IC = 10A Peak, Vclamp = 250V,
tc IB1 = 500mA, VBE(off) = 5V, TC = +100°C
tsv IC = 10A Peak, Vclamp = 250V,
tc IB1 = 500mA, VBE(off) = 5V, TC = +25°C
Min Typ Max Unit
500 – – V
500 – – V
375 – – V
– – 0.25 mA
– – 5.0 mA
– – 5.0 mA
– – 175 mA
40 – 400
30 – 300
– – 2.0 V
– – 2.5 V
– – 3.5 V
– – 2.5 V
– – 2.5 V
–35V
8––
100 – 325 pF
– 0.12 0.25 µs
– 0.5 1.5 µs
– 0.8 2.0 µs
– 0.2 0.6 µs
– 1.5 3.5 µs
– 0.36 1.6 µs
– 0.8 – µs
– 0.18 – µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is
comparable to that of typical fast recovery rectifiers.




 NTE98
C
B
E
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case




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