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NDP408BE Datasheet, Equivalent, Effect Transistor.N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor |
| Part | NDP408BE |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Feature | May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
| Manufacture | Fairchild |
| Datasheet |
| Part | NDP408BE |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Feature | May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
| Manufacture | Fairchild |
| Datasheet |
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