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NE38018 Datasheet, Equivalent, N-CHANNEL HJ-FET.L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Part | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-F ET
FEATURES
Super Low noise figure & H igh Associated Gain NF = 0. 55 dB typ. G a = 14. 5 dB typ. OIP3 = 22 dBm (V67), O IP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 9 00 MHz 4 pins super mini mold package W g = 800 µm ORDERING INFORMATION (PLAN ) Part Number NE38018-T1 Quantity 3 kpc s/Reel. Packing Style Embossed tape 8 m m wide. Pin3 (Source), Pin4 (Drain) fac e to perforation side of the tape. NE38 018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou . |
| Manufacture | NEC |
| Datasheet |
| Part | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-F ET
FEATURES
Super Low noise figure & H igh Associated Gain NF = 0. 55 dB typ. G a = 14. 5 dB typ. OIP3 = 22 dBm (V67), O IP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 9 00 MHz 4 pins super mini mold package W g = 800 µm ORDERING INFORMATION (PLAN ) Part Number NE38018-T1 Quantity 3 kpc s/Reel. Packing Style Embossed tape 8 m m wide. Pin3 (Source), Pin4 (Drain) fac e to perforation side of the tape. NE38 018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou . |
| Manufacture | NEC |
| Datasheet |
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