OH10003 Datasheet PDF Download, Panasonic Semiconductor





(PDF) OH10003 Datasheet Download

Part Number OH10003
Description GaAs Hall Device
Manufacture Panasonic Semiconductor
Total Page 2 Pages
PDF Download Download OH10003 Datasheet PDF

Features: GaAs Hall Devices OH10003 GaAs Hall Dev ice Magnetic sensor I Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0. 1 T) • Input resistance: typ. 0.85 k • Satisfactory linearity of GaAs h all voltage with respect to the magneti c field • Small temperature coefficie nt of the hall voltage: β ≤ − 0.06 %/°C • Sealed in the Mini type (4-pi n) package. Allowing automatic insertio n through the taping and the magazine p ackage. 2.9 ± 0.2 0.65 ± 0.15 2.8 − 0.3 1.5 + 0.2 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 0.5 R 0.95 1.9 ± 0.2 4 1 0.95 3 2 1.1 − 0.1 • Var ious hall motor (VCR, phonograph, VD, C D, and FDD) • Automotive equipment Industrial equipment • Applicable t o wide-varying field (OA equipment, etc .) I Absolute Maximum Ratings Ta = 25 C Parameter Control voltage Power diss ipation Operating ambient temperature S torage temperature Symbol VC PD Topr Ts tg Rating 12 150 −30 to +125 −55 to +125 Unit V mW °C °C 1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input .

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GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor
I Features
Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
Input resistance: typ. 0.85 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
Sealed in the Mini type (4-pin) package. Allowing automatic
insertion through the taping and the magazine package.
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.2
1.5 0.3
Unit : mm
0.65 ± 0.15
0.5 R
41
32
I Applications
Various hall motor (VCR, phonograph, VD, CD, and FDD)
Automotive equipment
Industrial equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
VC 12
V
PD 150 mW
Topr 30 to +125
°C
Tstg 55 to +125
°C
0.4 ± 0.2
1 : VH Output (−) side
2 : VC Input (−) side
3 : VH Output (+) side
4 : VC Input (+) side
Mini Type Package (4-pin)
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter
Hall voltage*1, 4
Unequilibrium ratio*2, 4
Input resistance
Output resistance
Temperature coefficient of hall voltage
Temperature coefficient of input
resistance
Symbol
VH
VHO/VH
RIN
ROUT
β
α
Conditions
VC = 6 V, B = 0.1 T
VC = 6 V, B = 0 T/B = 0.1 T
IC = 1 mA, B = 0 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T
IC = 1 mA, B = 0 T
Min Typ Max Unit
130 150 170 mV
±12 %
0.50 0.852
k
5 k
0.06 %/°C
0.3 %/°C
Linearity of hall voltage*3
γ IC = 6 mA, B = 0.1 T/0.5 T
2
Note)
*1 :
VH =
VH++VH
2
*2 : Unequilibrium ratio is a percentage of VHO with respect to VH.
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are
measured respectively at B = 0.1 T and 0.5 T to their average. That is,
γ=
KH5KH1
1/2(KH1+KH5)
(the cumulative sensitivity KH =
*4 : VH, VHO/VH rank classification
VH
IC B
)
%
Class
HQ
HR
VH (mV) 130 to 158 142 to 170
VHO/VH (%)
5 to +5
Marking Symbol 3HQ
3HR
IQ IR
130 to 158 142 to 170
+2 to +12
3IQ 3IR
KQ KR
130 to 158 142 to 170
2 to 12
3KQ
3KR
1

     






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