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P121

Part Number	P121
Manufacturer	Polyfet RF Devices
Description	PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	May 13, 2005
Detailed Description	polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF a...
Datasheet	P121 PDF File

Overview

polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.
0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T C= 25 C ) Total Device Dissipation 10 Watts Junction to Case Thermal Resistance o 15.
00 C/W Maximu...

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