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STW8NB100

ST Microelectronics
Part Number STW8NB100
Manufacturer ST Microelectronics
Description N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
Published May 17, 2005
Detailed Description ® STW8NB100 N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW8NB100 s s s s s s s V ...
Datasheet PDF File STW8NB100 PDF File

STW8NB100
STW8NB100

Overview
® STW8NB100 N - CHANNEL 1000V - 1.
2Ω - 8A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW8NB100 s s s s s s s V DSS 1000 V R DS(on) < 1.
5 Ω ID 8A TYPICAL RDS(on) = 1.
2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilit...


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