Power MOSFET. IRFP27N60K Datasheet

IRFP27N60K MOSFET. Datasheet pdf. Equivalent

Part IRFP27N60K
Description Power MOSFET
Feature PD - 94407 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supp.
Manufacture International Rectifier
Total Page 8 Pages
Datasheet
Download IRFP27N60K Datasheet



IRFP27N60K
PD - 94407
SMPS MOSFET IRFP27N60K
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
HEXFET® Power MOSFET
VDSS
600V
RDS(on) typ.
180m
ID
27A
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
27
18
110
500
4.0
± 30
13
-55 to + 150
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
530
27
50
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
1
03/20/02



IRFP27N60K
IRFP27N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA†
––– 180 220 mVGS = 10V, ID = 16A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
14 ––– ––– S VDS = 50V, ID = 16A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– ––– 180
ID = 27A
––– ––– 56 nC VDS = 480V
––– ––– 86
VGS = 10V, See Fig. 6 and 13 „
––– 27 –––
VDD = 300V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 110 ––– ns ID = 27A
––– 43 –––
RG = 4.3
––– 38 –––
VGS = 10V,See Fig. 10 „
––– 4660 –––
VGS = 0V
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 460 –––
VDS = 25V
––– 41 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5490 –––
––– 120 –––
––– 250 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 27
A showing the
integral reverse
––– ––– 110
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 27A, VGS = 0V „
––– 620 920 ns TJ = 25°C, IF = 27A
––– 11 16 µC di/dt = 100A/µs „
––– 36 53 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
ƒ ISD 27A, di/dt 390A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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