28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Curren...