SWITCHING TRANSISTOR. 2N2222ACSM Datasheet

2N2222ACSM TRANSISTOR. Datasheet pdf. Equivalent

Part 2N2222ACSM
Description NPN SWITCHING TRANSISTOR
Feature LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITC.
Manufacture Seme LAB
Datasheet
Download 2N2222ACSM Datasheet



2N2222ACSM
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
21
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = 1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage (IB = 0)
40V
VEBO
Emitter – Base Voltage (IB = 0)
6V
IC Collector Current
600mA
PD Total Device Dissipation
350mW
PD Derate above 50°C
2.0mW / °C
Rja Thermal Resistance Junction to Ambient
350°C/W
Tstg,Tj
Storage Temperature,Operating Temp Range
–55 to 200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 3/00



2N2222ACSM
SEME
LAB
2N2222ACSM
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)* Collector Emitter Sustaining Voltage IC = 10mA
40
V(BR)CBO* Collector Base Breakdown Voltage IC = 10mA
75
V(BR)EBO* Emitter Base Breakdown Voltage
IE = 10mA
IC = 0
6
ICEX*
Collector Cut-off Current (IC = 0)
IB = 0
VCE = 60V
ICBO*
Collector Base Cut-off Current
IE = 0
TC = 125°C
VCB = 60V
IEBO*
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V (off)
IBL* Base Current
VCE = 60V VEB = 3V (off)
VCE(sat)*
Collector Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
VBE(sat)* Base Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
0.6
IC = 0.1mA VCE = 10V
35
IC = 1mA
VCE = 10V
50
hFE* DC Current Gain
IC = 10mA VCE = 10V
75
TA = 55°C IC = 10mA VCE = 10V
35
IC = 150mA VCE = 10V
100
IC = 150mA VCE = 1V
50
* Pulse test tp = 300ms , d £ 2%
IC = 500mA VCE = 10V
40
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
fT
Transition Frequency
IC = 20mA VCE = 20V f = 100MHz 300
Cob
Output Capacitance
VCB = 10V IE = 0
f = 1.0MHz
Cib Input Capacitance
VBE = 0.5V IC = 0
f = 1.0MHz
hfe
Small Signal Current Gain IC = 1mA
IC = 10mA
VCE = 10V
VCE = 10V
f = 1kHz
f = 1kHz
50
75
Typ.
Typ.
Max.
10
10
10
10
20
0.3
1
1.2
2
Unit
V
V
V
nA
nA
mA
nA
nA
V
V
300
Max.
8
30
300
375
Unit
MHz
pF
pF
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 30V
VBE = 0.5V (off)
IC1 = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
10 ns
25 ns
225 ns
60 ns
fT is defined as the frequency at which hFE extrapolates to unity.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 3/00





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