POWER TRANSISTOR. SD57045-01 Datasheet

SD57045-01 TRANSISTOR. Datasheet pdf. Equivalent

SD57045-01 Datasheet
Recommendation SD57045-01 Datasheet
Part SD57045-01
Description RF POWER TRANSISTOR
Feature SD57045-01; ® SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERA.
Manufacture ST Microelectronics
Datasheet
Download SD57045-01 Datasheet





ST Microelectronics SD57045-01
® SD57045-01
RF POWER TRANSISTORS
The LdmoST FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENT THERMAL STABILITY
ν COMMON SOURCE CONFIGURATION
ν POUT = 45 W PEP with 13 dB gain @ 945 MHz
ν BeO FREE PACKAGE
DESCRIPTION
The SD57045-01 is a common source N-Channel
Enhancement-Mode Lateral Field-Effect RF
power transistor designed for broadband
commercial and industrial applications at
frequencies up to 1.0 GHz. The SD57045-01 is
designed for high gain and broadband
performance operating in common source mode
at 28V. It is ideal for base stations applications
requiring high linearity.
M250
(Epoxy sealed)
ORDER CODE
SD57045-01
BRANDING
TSD57045-01
PIN CONNECTION
1. Drain
2. Gate
3.Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
S ym b o l
V(BR)DSS
VDGR
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1M)
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70 oC)
Max. O perating Junction Temperature
Storage Temperature
Value
65
65
± 20
5
93
200
-65 to 200
THERMAL DATA (Tcase = 70 oC)
Rth (j-c) Junct ion-Case Thermal Resistance
Rth(c -s) Case-Heatsink Thermal Resist ance
1.4
0.50
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
Uni t
V
V
V
A
W
oC
oC
oC/ W
oC/ W
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ST Microelectronics SD57045-01
SD57045-01
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC
Symb ol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS( ON)
G FS
CISS
COSS
CRSS
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 28V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Parameter
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 250 mA
ID = 3 A
ID = 5 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symb ol
Parameter
POUT f = 945 MHz VDD = 28V
IDQ = 250 mA
IMD3 VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
GPS VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
ηD VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
Load f = 945 MHz VDD = 28 V
Mismatch ALL PHASE ANGLES
Pout = 45 W IDQ = 250 mA
Note: f1 = 945.0 MHz
f2 = 945.1 MHz
IMPEDANCE DATA
Min.
65
2.5
2
Typ .
0.7
2.7
80
40
3.2
M a x.
1
1
5.0
0.9
Un it
V
µA
µA
V
V
mho
pF
pF
pF
REF. 7143895B
Min.
45
13
33
10:1
Typ .
-32
15
40
M a x.
-28
Un it
W
dBc
dB
%
VSWR
FREQ .
925 MHz
930 MHz
945 MHz
960 MHz
965 MHz
ZIN ()
1.27 + j 0.82
1.21 + j 0.79
1.04 + j 0.71
0.93 + j 0.43
0.91 + j 0.41
ZDL ()
2.22 - j 1.63
2.24 - j 1.61
2.30 - j 1.52
2.37 - j 1.37
2.43 - j 1.36
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ST Microelectronics SD57045-01
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
SD57045-01
Gate-Source Voltage vs Case Temperature
Drain Current vs Gate Voltage
DC Maximum Safe Operating Area
Maximum Thermal Resistance vs Case
Temperature
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