POWER TRANSISTOR. SD57060-01 Datasheet

SD57060-01 TRANSISTOR. Datasheet pdf. Equivalent

SD57060-01 Datasheet
Recommendation SD57060-01 Datasheet
Part SD57060-01
Description RF POWER TRANSISTOR
Feature SD57060-01; ® SD57060-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LA.
Manufacture ST Microelectronics
Datasheet
Download SD57060-01 Datasheet




ST Microelectronics SD57060-01
® SD57060-01
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION
s POUT = 60 W with 11.5 dB gain @ 945 MHz
s BeO FREE PACKAGE
DESCRIPTION
The SD57060-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
station applications requiring high linearity.
M250
epoxy sealed
ORDER CODE
BRANDING
SD57060-01
TSD57060-01
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
V(BR)DSS
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70oC)
Max. Operating Junction Temperature
Storage Temperature
1. Drain
2. Gate
3.Source
Value
65
± 20
7
118
200
-65 to 150
Uni t
V
V
A
W
oC
oC
THERMAL DATA (Tcase = 70 oC)
Rth(j-c) Junction-Case Thermal Resistance
Rth(c -s)* Case-Heatsink T hermal Resist ance
1.1
0.5
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
oC/ W
oC/ W
January 2000
1/8



ST Microelectronics SD57060-01
SD57060-01
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC
S ymb ol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS( ON)
G FS
CISS
COSS
CRSS
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 28V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Parameter
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 100 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
65
2.0
2.5
Typ. Max.
1
1
5.0
0.7 0.8
88
44
2.8
REF. 7145649B
Un it
V
µA
µA
V
V
mho
pF
pF
pF
DYNAMIC
S ymb ol
Parameter
POUT f = 945 MHz VDD = 28 V IDQ = 100 mA
GP f = 945 MHz VDD = 28 V Pout = 60 W
ηD f = 945 MHz VDD = 28 V Pout = 60 W
Load f = 945 MHz VDD = 28 V
Mismatch ALL PHASE ANGLES
Pout = 60 W
IDQ = 100 mA
IDQ = 100 mA
IDQ = 100 mA
Min.
60
11.5
53
5:1
Typ .
15
60
Max.
Un it
W
dB
%
VSWR
IMPEDANCE DATA
FREQ .
925 MHz
945 MHz
960 MHz
ZIN ()
0.8 - j 0.095
0.7 - j 0.65
0.7 - j 0.1
ZDL ()
1.5 + j 0.48
1.6 + j 0.25
1.7 + j 0.130
2/8



ST Microelectronics SD57060-01
SD57060-01
TYPICAL PERFORMANCE
Output Power and Power Gain vs Input Power
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Efficiency vs Output Power
Output Power vs Drain-Source Voltage
Intermodulation Distorsion vs Output Power
3/8





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)