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SPB80P06P

Infineon Technologies
Part Number SPB80P06P
Manufacturer Infineon Technologies
Description Power Transistor
Published Jun 7, 2005
Detailed Description SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/...
Datasheet PDF File SPB80P06P PDF File

SPB80P06P
SPB80P06P

Overview
SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.
023 Continuous drain current ID -80 A · 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse W ID = -...


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