DatasheetsPDF.com

SPD30N03S2L-20

Part Number	SPD30N03S2L-20
Manufacturer	Infineon Technologies
Description	Power-Transistor
Published	Jun 7, 2005
Detailed Description	OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product...
Datasheet	SPD30N03S2L-20 PDF File

Overview

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant SPD30N03S2L-20 G Product Summary VDS 30 V RDS(on) 20 mΩ ID 30 A PG- TO252 -3 Type Package Marking SPD30N03S2L-20G PG- TO252 -3 2N03L20 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=-V, di...

Similar Datasheet

SPD30N03S2L-07 Power-Transistor - Infineon Technologies
SPD30N03S2L-07G Power-Transistor - Infineon Technologies
SPD30N03S2L-10 Power-Transistor - Infineon Technologies
SPD30N03S2L-10G Power-Transistor - Infineon Technologies
SPD30N03S2L-20 Power-Transistor - Infineon Technologies
SPD30N03S2L-20G Power-Transistor - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)