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TC58DVG02A1F00

Toshiba

1 Gbit (128M x *8its) CMOS NAND EPROM


Description
TC58DVG02A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static register which ...



Toshiba

TC58DVG02A1F00

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