STP53N08
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP53N08
s s s s s s s s
V DSS 80 V
R DS(on) < 0.024 Ω
ID 53 A
TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZA...
