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MGF0921A

Mitsubishi

LnS Band GaAs FET


Description
MITSUBISHI SEMICONDUCTOR MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm High power gain Gp=17dB(TYP.) @f=1.9GHz High power added efficiency ηadd=40%(TYP.) @f=1.9GHz,Pin...



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