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STD20N06

Part Number	STD20N06
Manufacturer	ST Microelectronics
Description	N-CHANNEL MOSFET
Published	Aug 10, 2005
Detailed Description	STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD20N06 s s s s s...
Datasheet	STD20N06 PDF File

Overview

STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD20N06 s s s s s s s s V DSS 60 V R DS( on) < 0.
03 Ω ID 20 A (*) s TYPICAL RDS(on) = 0.
026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology.
The ultra high cell density pro...

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