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IRGPC40M

IRF
Part Number IRGPC40M
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSIST...
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IRGPC40M
IRGPC40M

Overview
Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(typ) ≤ 2.
0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, hi...


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