Purpose Amplifier. MPSA55 Datasheet


MPSA55 Amplifier. Datasheet pdf. Equivalent


Part Number

MPSA55

Description

PNP General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 13 Pages
Datasheet
Download MPSA55 Datasheet


MPSA55
MPSA55
MMBTA55
PZTA55
CC
C
BE
TO-92
SOT-23
Mark: 2H
E
B
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73. See
MPSA56 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
4.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA55 *MMBTA55
PD Total Device Dissipation
Derate above 25°C
625 350
5.0 2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA Thermal Resistance, Junction to Ambient 200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA55
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation
MPSA55/MMBTA55/PZTA55, Rev A

MPSA55
Electrical Characteristics
Symbol
Parameter
PNP General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICBO Collector-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 60 V, IE = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
60 V
60 V
4.0 V
0.1 µA
0.1 µA
100
100
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
50
MHz


Features MPSA55 / MMBTA55 / PZTA55 MPSA55 MMBTA 55 C PZTA55 C E C B TO-92 E SOT-23 Mark: 2H B SOT-223 B C E PNP Gene ral Purpose Amplifier This device is de signed for general purpose amplifier ap plications at collector currents to 300 mA. Sourced from Process 73. See MPSA5 6 for characteristics. Absolute Maximu m Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Ba se Voltage Collector Current - Continuo us TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Va lue 60 60 4.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junct ion Temperature Range *These ratings a re limiting values above which the serv iceability of any semiconductor device may be impaired. NOTES: 1) These rating s are based on a maximum junction tempe rature of 150 degrees C. 2) These are s teady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. T hermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless othe.
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