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TA4012FU

Toshiba Semiconductor
Part Number TA4012FU
Manufacturer Toshiba Semiconductor
Description UHF WIDE-BAND AMPLIFIER
Published Aug 28, 2005
Detailed Description TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Fe...
Datasheet PDF File TA4012FU PDF File

TA4012FU
TA4012FU

Overview
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6.
5 mA z Wide band: f = 2.
0 GHz (3dB down) z Operatin supply voltage: VCC = 1.
5 to 2.
2 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C) Weight: 0.
006 g (typ.
) Characteristic Symbol Rating Unit Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature VCC1 2.
2 V VCC2 (Note 1) 3 V PD (Note 2) 300 mW Topr −40 to 85 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: When VCC is operated at less than 1/4 duty cycle.
Note 2: When mounted on the glass epoxy of 2.
5 cm2 × 1.
6 t Caution This device electrostatic sensitivity.
Please handle with caution.
Start of commercial production 1999-03 1 2014-03-01 TA4012FU Electrical Characteristics (Ta = 25°C, Zg = ZI = 50 Ω) Characteristic Symbol Test Condition Min Typ.
Max Unit Circuit current Band width Insertion gain Noise figure Isolation Input return loss Output return loss Output power at 1dB gain compression ICC BW |S21|2 NF |S12|2 |S11|2 |S22|2 Po1dB VCC = 2 V, non carrier VCC = 2 V VCC = 2 V, f = 1.
5 GHz VCC = 2 V, f = 1.
5 GHz VCC = 2 V, f = 1.
5 GHz VCC = 2 V, f = 1.
5 GHz VCC = 2 V, f = 1.
5 GHz VCC = 2 V, f = 1.
5 GHz Note 3: BW is the frequency of 3dB down from |S21|2 at 1.
5 GHz.
4.
5 6.
5 8.
5 mA (Note 3)...


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