STD1NA60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD1NA60
s s s s s
V DSS 600 V
R DS( on) < 8Ω
ID 1.6 A
s
s
TYPICAL RDS(on) = 7.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK...
