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Effect Transistor. MRF6522-70R3 Datasheet

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Effect Transistor. MRF6522-70R3 Datasheet






MRF6522-70R3 Transistor. Datasheet pdf. Equivalent




MRF6522-70R3 Transistor. Datasheet pdf. Equivalent





Part

MRF6522-70R3

Description

RF Power Field Effect Transistor



Feature


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order th is document by MRF6522 - 70/D The RF M OSFET Line RF Power Field Effect Trans istor Designed for GSM 900 frequency ba nd, the high gain and broadband perform ance of this device make it ideal for l arge - signal, common source amplifier applications in 26 volt base station eq uipment. • Specifi.
Manufacture

Motorola

Datasheet
Download MRF6522-70R3 Datasheet


Motorola MRF6522-70R3

MRF6522-70R3; ed Performance @ Full GSM Band, 921 - 96 0 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Ty p) • Available in Tape and Reel. R3 S uffix = 250 Units per 32 mm, 13 inch Re el. N - Channel Enhancement - Mode Lat eral MOSFET MRF6522−70R3 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semi.


Motorola MRF6522-70R3

conductor, Inc... CASE 465D - 05, STYLE 1 NI - 600 MAXIMUM RATINGS Rating Dra in - Source Voltage Gate - Source Volta ge Drain Current — Continuous Total D evice Dissipation @ TC = 25°C Derate a bove 25°C Storage Temperature Range Op erating Junction Temperature Symbol VDS S VGS ID PD Tstg TJ Value 65 ± 20 7 15 9 0.9 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THER.


Motorola MRF6522-70R3

MAL CHARACTERISTICS Characteristic Therm al Resistance, Junction to Case Symbol RθJC Value 1.1 Unit °C/W NOTE - CAUT ION - MOS devices are susceptible to da mage from electrostatic charge. Reasona ble precautions in handling and packagi ng MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA  Motorol a, Inc. 2004 For More Information On T his Product, Go to: ww.

Part

MRF6522-70R3

Description

RF Power Field Effect Transistor



Feature


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order th is document by MRF6522 - 70/D The RF M OSFET Line RF Power Field Effect Trans istor Designed for GSM 900 frequency ba nd, the high gain and broadband perform ance of this device make it ideal for l arge - signal, common source amplifier applications in 26 volt base station eq uipment. • Specifi.
Manufacture

Motorola

Datasheet
Download MRF6522-70R3 Datasheet




 MRF6522-70R3
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6522 - 70/D
The RF MOSFET Line
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common source
amplifier applications in 26 volt base station equipment.
Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6522−70R3
921 - 960 MHz, 70 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465D - 05, STYLE 1
NI - 600
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
± 20
7
159
0.9
- 65 to +150
200
Value
1.1
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF6522 - 70R3
1




 MRF6522-70R3
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 400 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
2
3
4 Vdc
VGS(Q)
3
4
5 Vdc
VDS(on)
0.15
0.6
Vdc
gfs 2 3 — S
DYNAMIC CHARACTERISTICS
Input Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss — 130 —
Coss
41
47
52
Crss 2.4 3 3.4
pF
pF
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Output Power (2)
(VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Common - Source Amplifier Power Gain @ P1dB (Min) (2)
(VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ Pout = 50 W
(VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ P1dB (2)
(VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Input Return Loss @ Pout = 50 W
(VDD = 26 Vdc, IDQ = 400 mA,
f = 921 MHz and 960 MHz
f = 940 MHz)
P1dB
Gps
η1
η2
IRL
73
14
47
80 — W
16 18 dB
51 — %
58 — %
dB
— - 10
— - 15
Output Mismatch Stress (2)
(VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz,
VSWR = 5:1, All Phase Angles)
Ψ
No Degradation In Output Power
Before and After Test
(1) Value excludes the input matching.
(2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch
consistency.
MRF6522 - 70R3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com




 MRF6522-70R3
Freescale Semiconductor, Inc.
VBIAS
Vreg
Vin
C1
T1 Vout
Gnd R1
R6
R2
R3
T2
R4
C3 C12
C7 C4 C10
R5
+
C2
RF Input
C6
C5
Q1
C8
C13
C9 C11
VSUPPLY
C14
RF Output
C1
C2
C3
C4, C6, C14
C5
C7, C8, C13
C9, C10
C11, C12
R1
R2
1.0 µF Chip Capacitor (0805)
10 µF, 35 Vdc Tantalum Capacitor
100 nF Chip Capacitor
22 pF Chip Capacitors, ACCU - P (0805)
2.7 pF Chip Capacitor, ACCU - P (0805)
4.7 pF Chip Capacitors, ACCU - P (0805)
8.2 pF Chip Capacitors, ACCU - P (0805)
2.2 pF Chip Capacitors, ACCU - P (0805)
10 Chip Resistor (0805)
1.0 kChip Resistor (0805)
R3 1.2 kChip Resistor (0805)
R4 2.2 kChip Resistor (0805)
R5 220 Chip Resistor (0805)
R6 5.0 kSMD Potentiometer
T1 LP2951 Micro - 8
T2 BC847 SOT - 23
SUBSTRATE GI180 0.8 mm
Figure 1. MRF6522 - 70 Test Circuit Schematic
VBIAS
Ground
C1 R1 T1
R2
R3
R4
T2
C6
C5
R6
C3
C4
R5
C7
C8
Q1
VSUPPLY
C2
C14
C10 C12
C13
C9 C11
STRAP
Figure 2. MRF6522 - 70 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF6522 - 70R3
3



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