DatasheetsPDF.com

POWER TRANSISTORS. MRF652 Datasheet

DatasheetsPDF.com

POWER TRANSISTORS. MRF652 Datasheet






MRF652 TRANSISTORS. Datasheet pdf. Equivalent




MRF652 TRANSISTORS. Datasheet pdf. Equivalent





Part

MRF652

Description

RF POWER TRANSISTORS



Feature


MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by MRF6 52/D NPN Silicon RF Power Transistors Designed for 12.5 Vdc UHF large–signa l, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 5 12 MHz Characteristics Output Power = 5 .0 Watts Minimum Gain = 10 dB Efficienc y = 65% (Typ) • Typica.
Manufacture

Motorola

Datasheet
Download MRF652 Datasheet


Motorola MRF652

MRF652; l Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB • Series Equivalent L arge–Signal Characterization • Gold Metallized, Emitter Ballasted for Long Life and Reliability • Capable of 30 :1 VSWR Load Mismatch at 15.5 V Supply Voltage • Circuit board photomaster a vailable upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXI MUM RATINGS Rating Collector.


Motorola MRF652

–Emitter Voltage Collector–Base Volt age Emitter–Base Voltage Collector Cu rrent — Continuous Total Device Dissi pation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Jun ction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 16 36 4.0 2.0 25 1 43 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C MRF652 MRF652 S 5.0 W, 512 MHz RF POWER TRANSIS.


Motorola MRF652

TORS NPN SILICON CASE 244–04, STYLE 1 MRF652 THERMAL CHARACTERISTICS Charac teristic Thermal Resistance, Junction t o Case Symbol RθJC Max 7.0 Unit °C/W CASE 249–06, STYLE 1 MRF652S ELECTRI CAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS C ollector–Emitter Breakdown Voltage (I C = 25 mAdc, IB = 0) Collec.

Part

MRF652

Description

RF POWER TRANSISTORS



Feature


MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by MRF6 52/D NPN Silicon RF Power Transistors Designed for 12.5 Vdc UHF large–signa l, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 5 12 MHz Characteristics Output Power = 5 .0 Watts Minimum Gain = 10 dB Efficienc y = 65% (Typ) • Typica.
Manufacture

Motorola

Datasheet
Download MRF652 Datasheet




 MRF652
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16
36
4.0
2.0
25
143
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Symbol
RθJC
Max
7.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
Min
16
36
36
4.0
10
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
Order this document
by MRF652/D
MRF652
MRF652S
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244–04, STYLE 1
MRF652
CASE 249–06, STYLE 1
MRF652S
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
— 1.0 mAdc
— 150 —
(continued)
MRF652 MRF652S
1




 MRF652
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob — 9.5 15 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 5.0 W)
f = 512 MHz
Gpe
10
11
dB
f = 870 MHz
— 6.0 —
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 5.0 W, f = 512 MHz)
η 60 65 — %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 500 mW, f = 512 MHz,
VSWR = 30:1, At All Phase Angles)
ψ
No Degradation in Output Power
B2 B3
+12.5 Vdc
+
C6
C7 C9
GRD
Z1
C1 C2
L2
C4
D.U.T.
C8
Z2 Z3 Z4
L1
C3
B1
C5
C10
Z5
C11
C12
B1, B2, B3 — Ferrite Bead
C1 — 7.0 pF Unelco Mica
C2 — 1.0 – 6.0 pF Johanson Variable 5201
C3 — 15 pF Unelco Mica
C4 — 43 pF Mini–Underwood Mica
C5 — 56 pF Mini–Underwood Mica
C6 — 1000 pF Unelco Mica
C7 — 0.1 µF Ceramic
C8 — 68 pF Mini–Underwood Mica
C9 — 1.0 µF Electrolytic 25 V
C10, C11 — 5.0 pF Unelco Mica
C12 — 1.0 – 10 pF Johanson Variable 5501
L1, L2 — 6 Turns, 20 AWG Wire 0.125ID
Z1, Z2 — 25 Ohm µStripline
Z3, Z4, Z5 — 50 Ohm µStripline
Board — 0.032Glass–Teflon
Figure 1. 440 – 512 MHz Broadband Test Circuit
MRF652 MRF652S
2
MOTOROLA RF DEVICE DATA




 MRF652
10
f = 440 MHz
8
6
512 MHz
4
10
8
6
4
Pin = 1 W
0.5 W
0.25 W
2
VCC = 12.5 V
2 VCC = 12.5 V
0
0 0.2 0.4 0.6 0.8 1
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
0
440 460 480
500 520
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
10
Pin = 1 W
8
6 0.5 W
4 0.25 W
2 f = 512 MHz
0
6 8 10 12 14 16
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
8
Pout
6
80
η
4
70
60
2
Pin = 0.5 W
VCC = 12.5 V
VSWR
0
440 460 480
500
f, FREQUENCY (MHz)
50
2:0 40
1:5
1:1
520
Figure 5. Typical Broadband Circuit Performance
2
3
1
01
Zin 470 2
512
1.0
f = 400 MHz
2.0 440
3.0
4.0 Zo = 10
470 512
ZOL*
440
f = 400 MHz
5.0
6.0
7.0
8.0
9.0
10
3
VCC = 12.5 Vdc
Pout = 5.0 W
f Zin
MHz Ohms
ZOL*
Ohms
400 1.18 + j0.54 6.7 – j6.9
440 1.19 + j0.88 7.05 – j6.1
470 1.19 + j1.11 7.6 – j5.1
512 1.19 + j1.35 8.1 – j4.1
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA
MRF652 MRF652S
3



Recommended third-party MRF652 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)