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IXDR30N120

IXYS Corporation

High Voltage IGBT


Description
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA G C E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside* G = Gate C = Collector E = Emitter Symbol VCES VCGR VG...



IXYS Corporation

IXDR30N120

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