LOW NOISE L TO K-BAND GaAs MESFET
FEATURES
LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz LG = 0.3 µm, WG = 280 µm EPITAXIAL TECHNOLOGY LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
24
2.5
21
2 GA 1.5
18
15
1 NF 0.5
12
DESCRIPTION
The NE7130...
