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SUM110N10-09

Vishay Siliconix
Part Number SUM110N10-09
Manufacturer Vishay Siliconix
Description N-Channel 100-V (D-S) 200C MOSFET
Published Sep 28, 2005
Detailed Description SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W)...
Datasheet PDF File SUM110N10-09 PDF File

SUM110N10-09
SUM110N10-09

Overview
SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) 0.
0095 @ VGS = 10 V ID (A) 110 a D D D D TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D D Automotive − 42-V Power Bus − DC/DC Conversion − Motor Drivers TO-263 G G D S S Top View Ordering Information: SUM110N10-09 SUM110N10-09-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 110a 87a 440 75 280 437.
5c 3.
75 −55 to 200 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 70677 S-32523—Rev.
C, 08-Dec-03 www.
vishay.
com PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.
4 Unit _C/W 1 SUM110N10-09 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 100 V, VGS = 0 V, TJ = 125_C VDS = 100 V, VGS = 0 V, TJ = 200_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 200_C VDS = 15 V, ID = 30 A 25 120 0.
0078 0.
0095 0.
017 0.
025 S W 100 2 4 "100 1 50 10 V nA mA mA A Symbol Test Co...


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