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DE375-102N10A

IXYS Corporation

RF Power MOSFET

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DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C VDSS ID25 Maximum Ratings 1000 1000 ±20 ±30 10 60 10 30 5 >200 940 425 4.5 0.16 0.23 Characteristic Values min...


IXYS Corporation

DE375-102N10A

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