MOS TRANSISTOR. STE53NA50 Datasheet

STE53NA50 TRANSISTOR. Datasheet pdf. Equivalent


ST Microelectronics STE53NA50
STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST E53NA50
VDSS
500 V
RDS(on)
< 0.085
ID
53 A
s TYPICAL RDS(on) = 0.075
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
February 1998
Va l u e
500
500
± 30
53
33
212
460
3.68
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/7


STE53NA50 Datasheet
Recommendation STE53NA50 Datasheet
Part STE53NA50
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Feature STE53NA50; STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST E53NA50 V DSS 500 V R DS(on.
Manufacture ST Microelectronics
Datasheet
Download STE53NA50 Datasheet




ST Microelectronics STE53NA50
STE53NA50
THERMAL DATA
Rt hj-ca se
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink W ith Conductive
Grease Applied
Max
Max
0 .2 7
0 .0 5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
26
1014
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 1 mA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
100
1000
± 400
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 27 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2.25
Typ .
3
Max.
3.75
Unit
V
0.075 0.085
53 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS >ID(on) X RDS(on)MAX ID = 27 A
Min.
25
Typ. Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
13
1500
450
16
2000
650
nF
pF
pF
2/7



ST Microelectronics STE53NA50
STE53NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 27 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 1)
VDD = 400 V ID = 53 A VGS = 10 V
Min.
Typ .
57
92
Max.
80
130
470 658
54
219
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V
ID = 53 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
Min.
Typ .
105
36
145
Max.
145
50
205
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 53 A
VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 53 A di/dt = 100 A/µs
VR = 100 V Tj = 150 oC
(see test circuit, figure 3)
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
53
212
Unit
A
A
1000
31.5
63
1.6
V
ns
µC
A
Safe Operating Area for
Thermal Impedance
3/7







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)