Schottky Diodes. SD103CW Datasheet

SD103CW Diodes. Datasheet pdf. Equivalent


General Semiconductor SD103CW
SD103AW THRU SD103CW
Schottky Diodes
SOD-123
.022 (0.55)
Cathode Mark
Top View
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring. The
low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching
and low logic level applications. Other
applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
This diode is also available in MiniMELF case with the
type designation LL103A … LL103C and DO-35 case
with the type designations SD103A .. SD103C.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
SD103AW
SD103BW
SD103CW
VRRM
VRRM
VRRM
Power Dissipation (Infinite Heat Sink)
Ptot
Single Cycle Surge
10 µs Square Wave
IFSM
Junction Temperature
Tj
Storage Temperature Range
TS
2) Valid provided that electrodes are kept at ambient temperature
Value
40
30
20
400 2)
2
125 2)
–55 to +150 2)
Unit
V
V
V
mW
A
°C
°C
4/98


SD103CW Datasheet
Recommendation SD103CW Datasheet
Part SD103CW
Description (SD103AW - SD103CW) Schottky Diodes
Feature SD103CW; SD103AW THRU SD103CW Schottky Diodes FEATURES SOD-123 .022 (0.55) ♦ For general purpose application.
Manufacture General Semiconductor
Datasheet
Download SD103CW Datasheet




General Semiconductor SD103CW
SD103AW THRU SD103CW
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
SD103AW
SD103BW
SD103CW
IR
IR
IR
––
––
––
Forward Voltage Drop
at IF = 20 mA
at IF = 200 mA
Junction Capacitance
at VR = 0 V, f = 1 MHz
VF
VF
Ctot
50
Reverse Recovery Time
at IF = IR = 50 mA to 200 mA, recover to 0.1 IR
trr
Thermal Resistance Junction to Ambient Air
RthJA
2) Valid provided that electrodes are kept at ambient temperature (SOD-123)
10
Max.
5
5
5
0.37
0.6
0.3 2)
Unit
µA
µA
µA
V
V
pF
ns
K/mW
RATINGS AND CHARACTERISTICS SD103AW THRU SD103CW



General Semiconductor SD103CW
RATINGS AND CHARACTERISTIC CURVES SD103AW THRU SD103CW





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