DatasheetsPDF.com

IGBT. SKIIP31NAB12 Datasheet

DatasheetsPDF.com

IGBT. SKIIP31NAB12 Datasheet






SKIIP31NAB12 IGBT. Datasheet pdf. Equivalent




SKIIP31NAB12 IGBT. Datasheet pdf. Equivalent





Part

SKIIP31NAB12

Description

IGBT



Feature


www.DataSheet4U.com SKiiP 31 NAB 12 Abs olute Maximum Ratings Symbol Inverter V CES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22 NA B 12) Values 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 1500 35 700 2400 – 4 0 . . . + 150 – 40 . . . + 125 2500 U nits V V A A A A V A A A2s °C °C V T heatsink = 25 / 80 °C tp < 1 ms; Theat sink = 25 / 80 °C Theatsink = .
Manufacture

Semikron

Datasheet
Download SKIIP31NAB12 Datasheet


Semikron SKIIP31NAB12

SKIIP31NAB12; 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C MiniSKiiP 3 SEMIKRON integrated intelligent Power SKiiP 31 NAB 12 3-ph ase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Bri dge Rectifier VRRM Theatsink = 80 °C I D tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 C I2t Tj Tstg Visol AC, 1 min. Charac teristics Symbol Conditio.


Semikron SKIIP31NAB12

ns 1) IGBT - Inverter IC = 30 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 30 A; Tj = 125 °C tr Rgon = Rgoff = 39 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VG E = 0 V, 1 MHz per IGBT Rthjh IGBT - Ch opper * VCEsat IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) I C = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) tf inductiv.


Semikron SKIIP31NAB12

e load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh min. typ. ma x. Units V 2,5(3,1) 3,0(3,7) – ns 110 55 – ns 110 55 – ns 600 400 – ns 90 45 – DataSheet4U.com mJ – 7,8 nF – 2,0 – K/W 0,7 – – – – – – – – – V 2,5(3,1) 3 ,0(3,7) ns 110 55 ns 90 45 ns 600 400 n s 100 70 mJ – 4,0 nF – 1,0 K/W 1,4 – DataShee UL recognized file no. E63532 • • specificatio.

Part

SKIIP31NAB12

Description

IGBT



Feature


www.DataSheet4U.com SKiiP 31 NAB 12 Abs olute Maximum Ratings Symbol Inverter V CES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22 NA B 12) Values 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 1500 35 700 2400 – 4 0 . . . + 150 – 40 . . . + 125 2500 U nits V V A A A A V A A A2s °C °C V T heatsink = 25 / 80 °C tp < 1 ms; Theat sink = 25 / 80 °C Theatsink = .
Manufacture

Semikron

Datasheet
Download SKIIP31NAB12 Datasheet




 SKIIP31NAB12
www.DataSheet4U.com
SKiiP 31 NAB 12
Absolute Maximum Ratings
Symbol Conditions 1)
Inverter (Chopper see SKiiP 22 NAB 12)
VCES
VGES
IC
ICM
IF = –IC
IFM = –ICM
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Bridge Rectifier
VRRM
ID
IFSM
I2t
Theatsink = 80 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
Tj
Tstg
Visol
AC, 1 min.
Values
1200
± 20
45 / 30
90 / 60
38 / 26
76 / 52
1500
35
700
2400
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A2s
°C
°C
V
Characteristics
Symbol Conditions 1)
min. typ. max. Units
IGBT - Inverter
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 30 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 30 A; Tj = 125 °C
Rgon = Rgoff = 39
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
– 2,5(3,1) 3,0(3,7)
– 55 110
– 55 110
– 400 600
– 45 90
DataShe7e,t84U.com
– 2,0 –
– – 0,7
V
ns
ns
ns
ns
mJ
nF
K/W
IGBT - Chopper *
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 15 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 15 A; Tj = 125 °C
Rgon = Rgoff = 82
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
– 2,5(3,1) 3,0(3,7) V
– 55 110 ns
– 45 90 ns
– 400 600 ns
– 70 100 ns
– 4,0 – mJ
– 1,0 – nF
– – 1,4 K/W
Diode 2) - Inverter (Diode 2) - Chopper see SKiiP 22 NAB 12)
VF = VEC
VTO
rT
IRRM
Qrr
Eoff
Rthjh
IF = 25 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 25 A, VR = – 600 V
diF/dt = – 500 A/µs
VGE = 0 V, Tj = 125 °C
per diode
– 2,0(1,8) 2,5(2,3) V
– 1,0 1,2 V
– 32 44 m
– 25 – A
– 4,5 – µC
– 1,0 – mJ
– – 1,2 K/W
Diode - Rectifier
VF
Rthjh
IF = 35 A, Tj = 25 °C
per diode
– 1,2 – V
– – 1,6 K/W
Temperature Sensor
RTS T = 25 / 100 °C
1000 / 1670
Mechanical Data
M1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 – 9
2 – 2,5 Nm
M3
DataSheet*4UFo.crodmiagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
© by SEMIKRON
0698
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 12
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
DataShee
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics B 16 – 4
Options
also available with powerful
chopper. For characteristics
please refer to Inverter IGBT
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
B 16 – 57
DataSheet4 U .com




 SKIIP31NAB12
www.DataSheet4U.com
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
RG = 39
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
IC = 35 A
et4U.com
DataSheet4U.com
DataShee
Fig. 3 Turn-on /-off energy = f (IC)
ICpuls = 35 A
Fig. 4 Turn-on /-off energy = f (RG)
VGE = 0 V
f = 1 MHz
DataSFhiege. t54UT.cyopm. gate charge characteristic
B 16 – 58
DataSheet4 U .com
Fig. 6 Typ. capacitances vs. VCE
0698
© by SEMIKRON




 SKIIP31NAB12
www.DataSheet4U.com
MiniSKiiP 1200 V
ICop / IC
1.2
1.0
Mini1207
Tj = 150 °C
VGE = 15 V
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC
2,5
Mini1209
Tj = 150 °C
VGE = ± 15 V
2
ICsc/ICN
12
10
et4U.com 1,5
1
8
DataSheet4U.com
6
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
4
0,5
2
Mini1210
Tj = 150 °C
VGE = ± 15 V
tsc = 10 µs
Lext < 25 nH
DataShee
0
0
500
1000
1500
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
0
0
500
1000
1500
VCE [V]
Fig. 10 Safe operating area at short circuit of the IGBT
DataSFhiege. t141UT.cyopm. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
B 16 – 4
0698
© by SEMIKRON
DataSheet4 U .com



Recommended third-party SKIIP31NAB12 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)