TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source d...
