CT90AM-18 Transistor Datasheet

CT90AM-18 Datasheet PDF, Equivalent


Part Number

CT90AM-18

Description

Insulated Gate Bipolar Transistor

Manufacture

Mitsubishi Electric

Total Page 2 Pages
Datasheet
Download CT90AM-18 Datasheet


CT90AM-18
CT90AM-18
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CT90AM-18 .coCT90AM-18
uINSIUNLSAUTLEADTEGDATGEATBEIPBOILPAORLATR ATNRSAINSSTIOSRTOR
et4OUTLINE DRAWING
he20MAX.
Dimensions in mm
5
2
atasφ3.2 
www.d2
1
ŒŽ
0.5
5.45 5.45
3
q VCES ............................................................................... 900V
q IC .........................................................................................60A
4.0

q Simple drive
q Integrated Fast-recovery diode
q Small tail loss
ΠGATE
Œ
 COLLECTOR
Ž EMITTER
 COLLECTOR
q Low VCE Saturation Voltage
Ž
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
IC
ICM
IE
PC
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
VGE = 0V
Conditions
Ratings
900
±25
±30
60
120
40
250
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
A
A
W
°C
°C
Sep. 2000

CT90AM-18
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Etail
Itail
VEC
trr
Rth (ch-c)
Rth (ch-c)
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
VCE = 900V, VGE = 0V
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 0
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
IE = 60A, VGE = 0V
IE = 60A, dis/dt = –20A/µs
Junction to case
Junction to case
Limits
Unit
Min. Typ. Max.
— — 1.0 mA
— — ±0.5 µA
2.0 4.0 6.0 V
1.55 1.95
V
— 11000 —
pF
— 180 — pF
— 125 — pF
— 0.05 — µs
— 0.10 — µs
— 0.20 — µs
— 0.30 — µs
— 0.6 1.0 mJ/pls
— 6 12 A
— — 3.0 V
— 0.5 2.0 µs
— — 0.5 °C/W
— — 4.0 °C/W
Sep. 2000


Features INSULATED GATE BIPOLAR TRANSISTOR INSULA TED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING 20MAX. w q VCES ..... ....................................... ................................... 900 V q IC ................................ ....................................... .................. 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 1 Œ  Ž 0.5 3 5.45 5.45 4.0  Œ GATE  COLLECTOR Ž EMITTER  COLLECTOR Œ TO-3PL APPLICATION Mic rowave oven, Electoromagnetic cooking d evices, Rice-cookers MAXIMUM RATINGS S ymbol VCES VGES VGEM IC ICM IE PC Tj Ts tg (Tc = 25°C) Parameter Collector-e mitter voltage Gate-emitter voltage Pea k gate-emitter voltage Collector curren t Collector current (Pulsed) Emitter cu rrent Maximum power dissipation Junctio n temperature Storage temperature VGE = 0V Conditions Ratings 900 ± 25 ± 3 0 60 120 40 250 –40 ~ +150 –40 ~ +1 50 Unit V V V A A A W °C °C Sep. 2000 ww.DataSheet4U.com Ž 20.6MIN. w 2 2.
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