2SC3243 Transistors Datasheet

2SC3243 Datasheet PDF, Equivalent


Part Number

2SC3243

Description

Plastic Encapsulate Transistors

Manufacture

Jiangsu Changjiang Electronics

Total Page 1 Pages
PDF Download
Download 2SC3243 Datasheet PDF


2SC3243
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243 TRANSISTOR (NPN)
TO-92MOD
FEATURES
Power dissipation
PCM:
0.9 W (Tamb=25)
Collector current
ICM:
Collector-base voltage
1A
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=2mA, IB=0
IE=10µA, IC=0
VCB=50V, IE=0
VEB=4V, IC=0
VCE=4V, IC=100mA
IC=500mA, IB=25mA
VCE=2V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
60 V
60 V
6V
0.2 µA
0.2 µA
55 300
0.3 V
80 MHz
25 pF
omCLASSIFICATION OF hFE(1)
.cRank
t4uRange
www.datasheeMarking
C
55-110
D
90-180
E
150-300


Features JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-92MOD Plastic-Encapsulat e Transistors 2SC3243 FEATURES Power di ssipation PCM: 0.9 W (Tamb=25℃) TRAN SISTOR (NPN) TO-92MOD 1. EMITTER 2. CO LLECTOR 3. BASE Collector current 1 A ICM: Collector-base voltage 60 V V(BR)C BO: Operating and storage junction temp erature range TJ, Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown v oltage Collector-emitter breakdown volt age Emitter-base breakdown voltage Coll ector cut-off current Emitter cut-off c urrent DC current gain Collector-emitte r saturation voltage Transition frequen cy Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hF E(1) VCE(sat) 123 unless otherwise sp ecified) Test conditions MIN TYP MAX UN IT V V V Ic=10µA, IE=0 Ic=2mA, IB=0 I E=10µA, IC=0 VCB=50V, IE=0 VEB=4V, IC= 0 VCE=4V, IC=100mA IC=500mA, IB=25mA VC E=2V, IC=10mA VCB=10V, IE=0, f=1MHz 60 60 6 0.2 0.2 55 300 0.3 80 25 µA µA V MHz pF fT Cob CLASSIFICATION O.
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