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SSP10N60A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy...
Fairchild Semiconductor
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