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KM718V887

Samsung semiconductor

256Kx18 Synchronous SRAM


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KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value from 10mA to 20mA. Change Undershoot spec from -3.0V(pulse w...



Samsung semiconductor

KM718V887

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