APM2030N
N-Channel Enhancement Mode MOSFET
Features
20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package
Pin Description
1
2
3
G
D
S
Applications
Power Management in Computer, Portable Equipment and Battery Powered Systems.
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