DIFFUSED TRANSISTOR. 2SA1871 Datasheet

2SA1871 TRANSISTOR. Datasheet pdf. Equivalent


NEC 2SA1871
DATA SHEET
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
• New package with dimensions in between those of small signal
and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with 2SC4942
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
Tj
Tstg
Conditions
PW 10 ms, duty cycle 50 %
7.5 cm2 × 0.7 mm ceramic board used
Ratings
600
600
7.0
1.0
2.0
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


2SA1871 Datasheet
Recommendation 2SA1871 Datasheet
Part 2SA1871
Description PNP SILICON TRIPLE DIFFUSED TRANSISTOR
Feature 2SA1871; DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-V.
Manufacture NEC
Datasheet
Download 2SA1871 Datasheet




NEC 2SA1871
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Conditions
VCB = 600 V, IE = 0
VEB = 7.0 V, IC = 0
VCE = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 0.5 A
IC = 300 mA, IB = 60 mA
IC = 300 mA, IB = 60 mA
VCE = 10 V, IE = 50 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 0.5 A, VCC = 250 V
IB1 = IB2 = 0.1 A,
RL = 500 ,
KFE &/$66,),&$7,21
Marking
hFE1
GA1
30 to 60
GA2
40 to 80
GA3
60 to 120
7<3,&$/ &+$5$&7(5,67,&6 7D °&
2SA1871
MIN.
30
5
TYP.
60
20
–0.3
–0.85
30
40
0.1
3.5
0.1
MAX.
–10
–10
120
–1.0
–1.2
0.5
5.0
0.5
Unit
µA
µA
V
V
MHz
pF
µs
µs
µs
 'DWD 6KHHW '(-9'6



NEC 2SA1871
2SA1871
'DWD 6KHHW '(-9'6








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)