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DIFFUSED TRANSISTOR. 2SA1871 Datasheet |
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DATA SHEET
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
• New package with dimensions in between those of small signal
and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with 2SC4942
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms, duty cycle ≤ 50 %
7.5 cm2 × 0.7 mm ceramic board used
Ratings
−600
−600
−7.0
−1.0
−2.0
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Conditions
VCB = −600 V, IE = 0
VEB = −7.0 V, IC = 0
VCE = −5.0 V, IC = −0.1 A
VCE = −5.0 V, IC = −0.5 A
IC = −300 mA, IB = −60 mA
IC = −300 mA, IB = −60 mA
VCE = −10 V, IE = 50 mA
VCB = −10 V, IE = 0, f = 1.0 MHz
IC = −0.5 A, VCC = −250 V
IB1 = −IB2 = −0.1 A,
RL = 500 Ω,
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Marking
hFE1
GA1
30 to 60
GA2
40 to 80
GA3
60 to 120
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2SA1871
MIN.
30
5
TYP.
60
20
–0.3
–0.85
30
40
0.1
3.5
0.1
MAX.
–10
–10
120
–1.0
–1.2
0.5
5.0
0.5
Unit
µA
µA
–
–
V
V
MHz
pF
µs
µs
µs
'DWD 6KHHW '(-9'6
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2SA1871
'DWD 6KHHW '(-9'6
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