2SA1871 TRANSISTOR Datasheet

2SA1871 Datasheet, PDF, Equivalent


Part Number

2SA1871

Description

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SA1871 Datasheet


2SA1871
DATA SHEET
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
• New package with dimensions in between those of small signal
and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with 2SC4942
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
Tj
Tstg
Conditions
PW 10 ms, duty cycle 50 %
7.5 cm2 × 0.7 mm ceramic board used
Ratings
600
600
7.0
1.0
2.0
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

2SA1871
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Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Conditions
VCB = 600 V, IE = 0
VEB = 7.0 V, IC = 0
VCE = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 0.5 A
IC = 300 mA, IB = 60 mA
IC = 300 mA, IB = 60 mA
VCE = 10 V, IE = 50 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 0.5 A, VCC = 250 V
IB1 = IB2 = 0.1 A,
RL = 500 ,
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Marking
hFE1
GA1
30 to 60
GA2
40 to 80
GA3
60 to 120
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2SA1871
MIN.
30
5
TYP.
60
20
–0.3
–0.85
30
40
0.1
3.5
0.1
MAX.
–10
–10
120
–1.0
–1.2
0.5
5.0
0.5
Unit
µA
µA
V
V
MHz
pF
µs
µs
µs
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Features DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed f or high-speed highvoltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. PACKAGE DRAWING (UNIT: mm ) FEATURES • New package with dimens ions in between those of small signal a nd power signal package • High voltag e • Fast switching speed • Compleme ntary transistor with 2SC4942 QUALITY GRADES • Standard Please refer to “ Quality Grades on NEC Semiconductor Dev ices” (Document No. C11531E) publishe d by NEC Corporation to know the specif ication of quality grade on the devices and its recommended applications. Elec trode connection 1: Emitter 2: Collecto r 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base v oltage Collector to emitter voltage Emi tter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature St.
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