2SK0123 FET Datasheet

2SK0123 Datasheet, PDF, Equivalent


Part Number

2SK0123

Description

Silicon N-Channel Junction FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0123 Datasheet


2SK0123
Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q High mutual conductance gm
q Low noise voltage of NV
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
200
20 to +80
55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Drain
2: Source
3: Gate
Mini3-G1 Package
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Current consumption
ID VD = 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1% 100
600 µA
Drain to Source cut-off current IDSS
VDS = 4.5 V, VGS = 0
95 480 µA
Mutual conductance
gm VD = 4.5 V, VGS = 0, f = 1 kHz
0.7 1.6
mS
Noise figure
NV VD = 4.5V, RD = 2.2 kΩ ± 1%
CO = 10 pF, A-curve
4 µV
GV1
3 2
dB
Voltage gain
Voltage gain difference
GV2
GV3
|GV2 GV1|
|GV1 GV3|
VD = 4.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
VD = 12 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
VD = 1.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
0
4.5
0
0
3.3
0.3
+3.5
+3.5
dB
dB
dB
dB
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00005BED
1

2SK0123
2SK0123
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
gm VGS
2.0
VDS = 4.5 V
f = 1 kHz
Ta = 25°C
1.6
1.2
IDSS = 0.3 mA
0.8
0.4
0.15 mA
0
1.0 0.8 0.6 0.4 0.2
0
Gate to source voltage VGS (V)
ID VDS
0.40
Ta = 25°C
0.35
VGS = 0 V
0.30
0.25 0.05 V
0.20
0.15 0.10 V
0.10 0.15 V
0.05 0.20 V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm ID
2.0
VDS = 4.5 V
f = 1 kHz
Ta = 25°C
1.6
1.2
IDSS = 0.3 mA
0.8
0.4
0
0 0.1 0.2 0.3 0.4 0.5
Drain current ID (mA)
ID VGS
600
VDS = 4.5 V
500
400
300
Ta = 75°C
200
100
25°C
25°C
0
0.5 0.4 0.3 0.2 0.1
0
Gate to source voltage VGS (V)
2 SJF00005BED


Features Silicon Junction FETs (Small Signal) 2S K0123 (2SK123) Silicon N-Channel Juncti on FET For impedance conversion in low frequency For electret capacitor microp hone s Features q High mutual conductan ce gm q Low noise voltage of NV 1 2 (0. 95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1 0˚ Unit: mm 0.40+0.10 –0.05 3 0.16+ 0.10 –0.06 1.50+0.25 –0.05 2.8+0. 2 –0.3 s Absolute Maximum Ratings (T a = 25°C) Parameter Drain to Source vo ltage Drain to Gate voltage Drain to So urce current Drain to Gate current Gate to Source current Allowable power diss ipation Operating ambient temperature S torage temperature Symbol VDSO VDGO IDS O IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Un it V V mA mA mA mW °C °C 1.1+0.2 – 0.1 (0.65) 0 to 0.1 1.1+0.3 –0.1 1: Drain 2: Source 3: Gate Mini3-G1 Pac kage Marking Symbol: 1H Note: For the forming type, (Y) is indicated after th e part No. s Electrical Characteristic s (Ta = 25°C) Parameter Current consumption Drain to Source cut-off current Mutual con.
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