BUZ905X4S MOSFET Datasheet

BUZ905X4S Datasheet, PDF, Equivalent


Part Number

BUZ905X4S

Description

P-CHANNEL POWER MOSFET

Manufacture

ETC

Total Page 2 Pages
Datasheet
Download BUZ905X4S Datasheet


BUZ905X4S
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm (inches)
BUZ905X4S
BUZ906X4S
NEW PRODUCT UNDER DEVELOPMENT
P–CHANNEL
POWER MOSFET
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
12
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8
4 .9
(0 .1 8 7 )
(0 .1 9 3 )
(4 places)
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
R
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
43
3.3 (0.129)
3.6 (0.143)
14.9 (0.587)
15.1 (0.594)
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
38.0 (1.496)
38.2 (1.504)
R
=
4.0 (0.157)
(2 Places)
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
SOT227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGS Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ905X4S BUZ906X4S
–160V
–200V
±14V
–32A
–32A
500W
–55 to 150°C
150°C
0.3°C/W
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
Prelim. 4/94

BUZ905X4S
MAGNA
TEC
BUZ905X4S
BUZ906X4S
NEW PRODUCT UNDER DEVELOPMENT
ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX Drain – Source Breakdown Voltage
VGS = 10V
ID = –10mA
BVGSS Gate – Source Breakdown Voltage
VDS = 0
IG = ±100µA
VGS(OFF) Gate – Source Cut–Off Voltage
VDS = –10V
ID = –100mA
VDS(SAT)* Drain – Source Saturation Voltage
VGD = 0
ID = –32A
VGS = 10V
IDSX Drain – Source Cut–Off Current
VDS = –160V
VDS = –200V
yfs* Forward Transfer Admittance
VDS = –10V
ID = –5A
Ciss Input Capacitance
Coss
Output Capacitance
VDS = –10V
f = 1MHz
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
VDS = –20V
ID = –7A
Min.
–160
–200
±14
–0.1
2
* Pulse Test: Pulse Width = 300µS , Duty Cycle 2%
Typ.
TBE
TBE
TBE
TBE
TBE
Max. Unit
V
V
–1.5 V
–12 V
–10 mA
–10 mA
6S
pF
nS
D
SG
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
Prelim. 4/94


Features MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ905X4S BUZ906X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dime nsions in mm (inches) P–CHANNEL POWE R MOSFET Hex Nut M 4 (4 places) POWER MOSFETS FOR AUDIO APPLICATIONS 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 . 7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) FEA TURES • HIGH SPEED SWITCHING 4 3.3 ( 0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 (0 .1 57 ) (2 P lac e s) • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • H IGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING SOT227 Pin 1 – Drain Pin 2 .
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