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BUZ906DP Datasheet, Equivalent, POWER MOSFET.(BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET (BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET |
　
　
　
| Part | BUZ906DP |
|---|---|
| Description | (BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET |
| Feature | MAGNA
TEC
20. 0 5. 0 BUZ905DP BUZ906DP MECHANICAL DATA Dimensions in mm 3. 3 Di a. P–CHANNEL POWER MOSFET POWER MOS FETS FOR AUDIO APPLICATIONS FEATURES 1 2. 0 2 3 2. 0 1. 0 • HIGH SPEED SWIT CHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY R ATING 1. 2 0. 6 2. 8 3. 4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5. 45 5. 45 TO–3PBL Pin 1 – Gate Pin 2 †“ Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C unles . |
| Manufacture | ETC |
| Datasheet |
| Part | BUZ906DP |
|---|---|
| Description | (BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET |
| Feature | MAGNA
TEC
20. 0 5. 0 BUZ905DP BUZ906DP MECHANICAL DATA Dimensions in mm 3. 3 Di a. P–CHANNEL POWER MOSFET POWER MOS FETS FOR AUDIO APPLICATIONS FEATURES 1 2. 0 2 3 2. 0 1. 0 • HIGH SPEED SWIT CHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY R ATING 1. 2 0. 6 2. 8 3. 4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5. 45 5. 45 TO–3PBL Pin 1 – Gate Pin 2 †“ Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C unles . |
| Manufacture | ETC |
| Datasheet |
　
　
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