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m C-Band Internally Matched FET o FEATURES .c High Output Power: P1dB = 44.5dBm (Typ.) U High Gain: G1dB = 10.0dB (Typ.) 4 t High PAE: ηadd = 37% (Typ.) e = 33.5dBm Low IM3 = -46dBc@Po e Broad Band: 5.9h ~ 6.4GHz S Impedance Matched Zin/Zout = 50Ω aSealed Package t Hermetically a DESCRIPTION D . The FLM5964-25F is a power GaAs FET that is in...
