2SD1425 TRANSISTOR Datasheet

2SD1425 Datasheet, PDF, Equivalent


Part Number

2SD1425

Description

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Manufacture

Toshiba

Total Page 3 Pages
Datasheet
Download 2SD1425 Datasheet


2SD1425
:
SILICON NPN TRIPLE DIFFUSED MESA TYPE
COLOR TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES
. High Voltage : VCBO=1500V
. Low Saturation Voltage
: VCE(sat)=5V(Typ.) (I C=2A, IB=0.6A)
. High Speed : tf =1. 0/is(Max. ) (IcP=2A, lBl(end)=0.6A)
. Built-in Damper Type
. Glass Passivated Collector-Base Junction
Unit in mm
1&0MAX. 03.6x0.2
MAXIMUM RATINGS (T a=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
EQUIVALENT CIRCUIT
base ID-
SYMBOL
VCBO
VCEO
v EB0
ic
IE
?C
T stg
RATING
1500
600
UNIT
2.5
-2.5
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
80
150
-55-150
TOSHIBA
2-16D1A
Weight : 5.2g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter
Saturation Voltage
ICBO
v (BR)EB0
h FE
VcE(sat)
V C B=500V, I E=0
lE=200mA, lc=0
VCE=5V, I C=0.5A
I C=2A, I B =0.6A
Base-Emitter Saturation Voltage VBE(sat)
Forward Voltage (Damper Diode)
-V F
Transition Frequency
fT
Collector Output Capacitance
Cob
Fall Time (Fig.)
tf
I C=2A, I B=0.6A
I F=2.5A
V CE=10V, I C=0.1A
VCB =10V, I E=0, f=lMHz
I CP=2A, lBl(end)=0.6A
MIN.
-
5
8
TYP.
-
-
12
MAX.
10
-
-
UNIT
fik
V
- 58V
- - 1.5 V
- 1.6 2.0
V
- 3 - MHz
- 95 - PF
- 0.5 1.0 us
TOSHIBA CORPORATION
-890-

2SD1425
2SD1425
Fig. tf TEST CIRCUIT
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BASE CURRENT
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-891-


Features : SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATION S. FEATURES . High Voltage : VCBO=1500V . Low Saturation Voltage : VCE(sat)=5V (Typ.) (I C=2A, IB=0.6A) . High Speed : tf =1. 0/is(Max. ) (IcP=2A, lBl(end)=0 .6A) . Built-in Damper Type . Glass Pas sivated Collector-Base Junction Unit i n mm 1&0MAX. 03.6x0.2 MAXIMUM RATINGS (T a=25°C) CHARACTERISTIC Collector-Ba se Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Em itter Current Collector Power Dissipati on (Tc=25°C) Junction Temperature Stor age Temperature Range EQUIVALENT CIRCUI T base ID- SYMBOL VCBO VCEO v EB0 ic I E ?C T stg RATING 1500 600 UNIT 2.5 -2.5 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER 80 150 -55-150 TOSHIBA 2- 16D1A Weight : 5.2g ELECTRICAL CHARAC TERISTICS (Ta=25°C) CHARACTERISTIC S YMBOL TEST CONDITION Collector Cut-of f Current Emitter-Base Breakdown Voltag e DC Current Gain Collector-Emitter Sat uration Voltage ICBO v (BR)EB0 h FE VcE(sat) V C B=500V, I E=.
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