N-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
h N-C hannel ES nhancement Mode Field E ffect Transistor a t a P R ODUC T S UMMAR Y D . I V w R w w
DS S D
ee
U 4 t
m o .c
S T U/D1955NL
Arp,12 2005 ver1.2
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
55 @ V G S = 10V 80 @ V G S = 4.5V
R ugged and reliable.
55V
10A
TO-252 and...
