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2SD2425 Transistor Datasheet |
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| Part Number | 2SD2425 |
| Description | NPN Silicon Epitaxial Transistor |
| Manufacture | NEC Electronics |
| Total Page | 6 Pages |
| Datasheet |
DATA SHEET
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2425 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• New package with dimensions in between those of small
signal and power signal package
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1578
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection
1. Emitter
2. Collector
3.Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms, duty cycle ≤ 50 %
7.5 cm2 × 0.7 mm ceramic board mounted
Ratings
60
60
6.0
5.0
7.0
1.0
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16157EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
ton
tstg
tf
Conditions
VCB = 50 V, IE = 0
VEB = 6.0 V, IC = 0
VCE = 1.0 V, IC = 0.1 A
VCE = 1.0 V, IC = 2.0 A
VCE = 2.0 V, IC = 5.0 A
IC = 2.0 A, IB = 0.2 A
IC = 2.0 A, IB = 0.2 A
IC = 2.0 A, VCC= 10 V
IB1 = −IB2 = 0.2 A
RL = 5.0 Ω
hFE CLASSIFICATION
Marking
hFE2
AB1
100 to 200
AB2
160 to 320
AB3
200 to 400
2SD2425
MIN.
60
100
50
TYP.
180
200
150
90
0.9
0.6
0.8
0.08
MAX.
10
10
400
300
1.2
Unit
µA
µA
−
−
−
mV
V
µs
µs
µs
TYPICAL CHARACTERISTICS (Ta = 25°C)
2 Data Sheet D16157EJ1V0DS
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| Features | DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LO W-FREQUENCY POWER AMPLIFIERS AND MID-SP EED SWITCHING The 2SD2425 is a transis tor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor dr ivers. PACKAGE DRAWING (UNIT: mm) FEA TURES • New package with dimensions i n between those of small signal and pow er signal package • High current capa citance • Low collector saturation vo ltage • Complementary transistor with 2SB1578 QUALITY GRADES • Standard P lease refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality gr ade on the devices and its recommended applications. Electrode connection 1. E mitter 2. Collector 3.Base ABSOLUTE MA XIMUM RATINGS (Ta = 25°C) Parameter Co llector to base voltage Collector to em itter voltage Emitter to base voltage C ollector current (DC) Collector current (pulse) Base current (DC) Total power . |
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