Epitaxial Transistor. 2SC2298 Datasheet

2SC2298 Transistor. Datasheet pdf. Equivalent

Part 2SC2298
Description Silicon NPN Epitaxial Transistor
Feature 2SC2298 Silicon NPN Epitaxial Application High gain amplifier Outline TO-126 MOD 1 2 Absolute M.
Manufacture Hitachi Semiconductor
Datasheet
Download 2SC2298 Datasheet



2SC2298
2SC2298
Silicon NPN Epitaxial
mApplication
oHigh gain amplifier
.cOutline
t4UTO-126 MOD
taShee1 2 3
1. Emitter
2. Collector
3. Base
.DaAbsolute Maximum Ratings (Ta = 25°C)
Item
wCollector to base voltage
Collector to emitter voltage
wEmitter to base voltage
mCollector current
w .coCollector peak current
UCollector power dissipation
et4Junction temperature
heStorage temperature
www.DataSNote: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
PC*1
Tj
Tstg
2
3
1
Ratings
30
30
10
1.0
1.5
0.8
8
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C



2SC2298
2SC2298
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO
voltage
30
Emitter cutoff current
DC current transfer ratio
IEBO
h *1
FE1
h *1
FE2
h *1
FE3
——
4000 —
10000 —
10000 —
Collector to emitter saturation VCE(sat)
voltage
Base to emitter saturation
voltage
VBE(sat)
Note: 1. The 2SC2298 is grouped by hFE as follows.
Max Unit
—V
10 µA
1.5 V
2.0 V
Test conditions
IC = 1 mA, RBE =
VEB = 10 V, IC = 0
VCE = 3 V, IC = 10 mA
VCE = 3 V, IC = 100 mA
VCE = 3 V, IC = 400 mA
(pulse test)
IC = 400 mA, IB = 0.1 mA
(pulse test)
BC
hFE1 more 4000 more 5000
hFE2 more 10000 more 30000
hFE3 more 10000 more 25000
Maximum Collector Dissipation
Curve
10
8
6
4
2
0 50 100 150 200
Case temperature TC (°C)
Area of Safe Operation
3 iC(peak)
IC(max)
1.0
Ta = 25°C
0.3
1 Shot Pulse
DC (TC = 25°C)
0.1
0.03
1
2
5 10 20 50 100
Collector to emitter voltage VCE (V)
2





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